For 3R-MoS 2 polytype, the experimental lattice parameters are a 3.163 Å, b 3.163 Å, and c 18.370 Å, and the space group is (C 3 v) R3M (160. The structures of 3R- and 2H-MoS 2 are shown in Fig. binding energy shift comparing with MoSe2 grown on graphene, indicating a. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose-Einstein statistical factor and the temperature coefficient. The initial lattice parameters for 3R- and 2H- polytypes of MoS 2 were obtained from the x-ray data provided by Schönfeld et al. All structures blue-shift and sharpen with decreasing temperature as a result of the reducing lattice constant and electron-phonon interactions. Same planar structures and similar lattice constants are required. The separations in the B- and C-excitonic peaks are also observed. Keywords: Semiconductor, MoS2, MoSe2, GaN, ZnO, epitaxy, heterostructure. The ML has a 2H structure with a lattice constant estimated to be 3.29 ± 0.03 nm, which is in line with the bulk lattice constants reported in literature. At cryogenic temperatures 6 additional structures are resolved. We use the lattice constant a < 0.3282 nm for WSe 2 and a > 0.We find only 6 CPs for monolayer MoSe2 at room temperature. The lattice constants difference between GeS and MoSe2 monolayer, or the lattice mismatch, is about 2.4 which is in an acceptable range53, 54 and good for. Second derivatives of ε with respect to energy were numerically calculated and analyzed with standard lineshapes to extract accurate critical-point (CP) energies. a x and a y are the lattice vectors of the supercell along the x and y direction. Table 2: The lattice constants of MoSe2 in optimization. To calculate the elastic constants of monolayer MoS 2, we have applied strain on a supercell containing two rectangular unit cells.The corresponding supercell structure used in our calculation is depicted in Fig. The MoSe2 data were analyzed using the effective medium approximation, which treats the film and bare substrate regions as a single layer. studies the band structure and electronic and optical properties of MoSe2 and MoSe2 monolayer. Morphological and optical characterizations verified the excellent quality of the film. The sample is a large-area, partially discontinuous monolayer (submonolayer) film of MoSe2 grown on a sapphire substrate by selenization of pulsed laser deposited MoO3 film. The dielectric function of monolayer molybdenum diselenide (MoSe2) is obtained and analyzed at temperatures from 31 to 300 K and at energies from 0.74 to 6.42 eV.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |